The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Jun. 03, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huimei Zhou, Albany, NY (US);

Su Chen Fan, Cohoes, NY (US);

Miaomiao Wang, Albany, NY (US);

Zuoguang Liu, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 23/53238 (2013.01);
Abstract

Semiconductor device layout designs for Vt tuning are provided. In one aspect, a semiconductor device is provided. The semiconductor device includes: at least one first metal line in contact with a source or drain of an FET; at least one second metal line in contact with a gate of the FET, wherein the first metal line crosses the second metal line; and an oxygen diffusion blocking layer on top of the at least one first metal line in an overlap area of the at least one first metal line and the at least one second metal line. A method of forming a semiconductor device is also provided.


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