The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Apr. 26, 2021
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Yuichi Oshima, Ibaraki, JP;
Katsuaki Kawara, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/16 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); C30B 29/16 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02609 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H02M 3/33573 (2021.05); H02M 3/33576 (2013.01);
Abstract
A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×10cmor less.