The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Jul. 28, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Syuji Nozawa, Nirasaki, JP;

Tatsuya Yamaguchi, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B05D 1/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); B05D 1/60 (2013.01); H01L 21/02118 (2013.01); H01L 21/67103 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01);
Abstract

A film forming apparatus comprises: a processing chamber in which a substrate is accommodated; a gas supply configured to supply a gas containing a first monomer and a gas containing a second monomer into the processing chamber; a concentration distribution controller configured to control a gas flow within the processing chamber such that a concentration of a mixed gas including the gas containing the first monomer and the gas containing the second monomer on the substrate has a predetermined distribution; and a temperature distribution controller configured to control a temperature distribution of the substrate such that a temperature of a first region of the substrate is higher than a temperature of a second region of the substrate, the concentration of the mixed gas in a region corresponding to the first region being higher than the concentration of the mixed gas in a region corresponding to the second region.


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