The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Apr. 12, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Jun Xu, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/12 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01); H03K 19/17728 (2020.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/12 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01); H03K 19/17728 (2013.01);
Abstract

Memory might include a controller configured to cause the memory to capacitively couple a first voltage level from a voltage node to a node of a sense circuit, selectively discharge the node of the sense circuit through a memory cell, measure a current demand of the voltage node while selectively discharging the node of the sense circuit through the memory cell, determine a second voltage level in response to the measured current demand, isolate the node of the sense circuit from the memory cell, capacitively couple the second voltage level from the voltage node to the node of the sense circuit, and determine a data state of the memory cell in response to a voltage level of the node of the sense circuit while capacitively coupling the second voltage level to the node of the sense circuit.


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