The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Dec. 31, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Francis Kanyiri Mungai, San Jose, CA (US);
Vijayabhaskara Venkatagiriyappa, Bangalore, IN;
Yung-Cheng Hsu, New Taipei, TW;
Keiichi Tanaka, San Jose, CA (US);
Mario D. Silvetti, Morgan Hill, CA (US);
Mihaela A. Balseanu, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C23C 16/455 (2006.01); H01L 21/687 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/325 (2013.01); C23C 16/4582 (2013.01); C23C 16/45544 (2013.01); H01L 21/68757 (2013.01);
Abstract
Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.
Quick Actions:
Mungai, Francis. (2023). Plasma induced modification of silicon carbide surface (U.S. Patent No. 11692267). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11692267
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile