The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Dec. 13, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Fatma Arzum Simsek-Ege, Boise, ID (US);

Clement Jacob, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H10B 12/053 (2023.02); H10B 12/488 (2023.02); H10B 12/31 (2023.02);
Abstract

An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by the channel. The example apparatus further includes a gate separated from the channel by a dielectric material and an access line formed in a high aspect ratio trench connected to the gate. The access line includes a first titanium nitride (TiN) material formed in the trench, a metal material formed over the first TiN material, and a second TiN material formed over the metal material. The example apparatus further includes a sense line coupled to the first source/drain region and a storage node coupled to the second source/drain region.


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