The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Mar. 12, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dongkyun Lim, Hwaseong-si, KR;
Youngsin Kim, Hwaseong-si, KR;
Kijin Park, Seoul, KR;
Hoju Song, Seongnam-si, KR;
Dongkwan Yang, Seoul, KR;
Sangho Yun, Yongin-si, KR;
Gyuhyun Lee, Seoul, KR;
Jieun Lee, Yongin-si, KR;
Seunguk Han, Suwon-si, KR;
Yoongi Hong, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a gate structure on a substrate, first and second spacer structures on first and second sidewalls, respectively, opposite to each other of the gate structure, and first and second source/drain layers at upper portions of the substrate adjacent to the first and second sidewalls, respectively, of the gate structure. An upper surface of the gate structure has a height with reference to an upper surface of the substrate being a base level decreasing from a central portion to the first sidewall and substantially constant from the central portion to the second sidewall.