The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Dec. 27, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Vladimir Machkaoutsan, Flemish Brabant, BE;
Richard J. Hill, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 11/402 (2006.01); G11C 11/404 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); G11C 11/4023 (2013.01); G11C 11/4045 (2013.01); H01L 27/10847 (2013.01);
Abstract
Disclosed are monolithically integrated three-dimensional (3D) DRAM array structures that include one-transistor, one-capacitor (1T1C) cells embedded at multiple device tiers of a layered substrate assembly. In some embodiments, vertical electrically conductive data-line and ground pillars extending through the substrate assembly provide the transistor source and ground voltages, and horizontal electrically conductive access lines at multiple device levels provide the transistor gate voltages. Process flows for fabricating the 3D DRAM arrays are also described.