The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Mar. 26, 2020
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Yudi Setiawan, Singapore, SG;
Handoko Linewih, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/0485 (2013.01); H01L 29/1608 (2013.01); H01L 29/452 (2013.01); H01L 29/7802 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device comprises a substrate having a first surface and a second surface, the substrate comprising a wide bandgap semiconductor material. An epitaxial layer is on the first surface of the substrate and a metal germanosilicide layer is above the second surface of the substrate. The metal germanosilicide layer forms an ohmic contact to the substrate.