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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11688771 B1

PDFFull Text
Date of Patent:
Jun. 27, 2023

Filed:

May. 21, 2021

Method for manufacturing semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Aryan Afzalian, Chastre, BE;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Mark V Prenty

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1045 (2013.01); H01L 29/0847 (2013.01); H01L 29/0895 (2013.01); H01L 29/105 (2013.01); H01L 29/1054 (2013.01); H01L 29/42392 (2013.01); H01L 29/66462 (2013.01); H01L 29/66492 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/7834 (2013.01); H01L 29/7835 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes forming a source and region in a substrate. A core channel region is formed adjacent the source region. A barrier layer is formed adjacent the core channel region. A drain region is formed in the substrate such that the barrier layer is between the core channel region and the drain region. A first portion of a shell is formed along the core channel region. A second portion of the shell is formed along the barrier layer. The second portion of the shell includes a different material than the first portion of the shell.

Find Patent Forward Citations

Afzalian, Aryan. (2023). Method for manufacturing semiconductor device (U.S. Patent No. 11688771). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11688771

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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