The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Feb. 25, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Shuan Li, Zhudong Township, Hsinchu County, TW;
Ming-Lung Cheng, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure includes first nanostructures formed over a substrate. The structure also includes a first gate structure wrapped around the first nanostructures. The structure also includes first source/drain epitaxial structures formed over opposite sides of the first nanostructures. The structure also includes second nanostructures formed over the first nanostructure. The structure also includes a second gate structure wrapped around the second nanostructures. The structure also includes second source/drain epitaxial structures formed over opposite sides of the second nanostructures. The first gate structure and the second gate structure have different conductivity types, and the Ge concentration of the first nanostructures and the Ge concentration of the second nanostructures are different.