The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Aug. 03, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventor:
Yi-Feng Chang, Xinbei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 23/482 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 23/4824 (2013.01); H01L 21/02697 (2013.01); H01L 23/522 (2013.01); H01L 27/0248 (2013.01);
Abstract
A semiconductor device includes a substrate and a metallization layer. The substrate has an active region that includes opposite first and second edges. The metallization layer is disposed above the substrate, and includes a pair of metal lines and a metal plate. The metal lines extend from an outer periphery of the active region into the active region and toward the second edge of the active region. The metal plate interconnects the metal lines and at least a portion of which is disposed at the outer periphery of the active region.