The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Dec. 07, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Wei Liu, Wuhan, CN;

Shiqi Huang, Wuhan, CN;

Liang Chen, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 23/5286 (2013.01);
Abstract

Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first die. The first die includes a semiconductor substrate with transistors formed on a first side of the semiconductor substrate. Further, the first die includes a connection structure extending through the semiconductor substrate and conductively connecting a first conductive layer disposed on the first side of the semiconductor substrate with a second conductive layer disposed on a second side of the semiconductor substrate that is opposite to the first side of the semiconductor substrate. Further, the first die includes a shielding structure disposed in the semiconductor substrate and between the connection structure and at least a transistor. The shielding structure includes a third conductive layer and can alleviate coupling between the connection structure and the transistor.


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