The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Jun. 18, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Somnath Ghosh, Clifton Park, NY (US);

Karen Elizabeth Petrillo, Voorheesville, NY (US);

Cody J. Murray, Burnt Hills, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Chi-Chun Liu, Altamont, NY (US);

Dominik Metzler, Clifton Park, NY (US);

John Christopher Arnold, North Chatham, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76892 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01L 21/76837 (2013.01); H01L 23/53242 (2013.01);
Abstract

A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of metal lines on substrate, forming a sacrificial dielectric material layer between the metal lines, forming a hardmask over at least one of the metal lines, etching at least one of the metal lines that is not covered by the hardmask, treating the sacrificial dielectric material layer to soften the layer. The method also includes removing the treated sacrificial dielectric material layer.


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