The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Jul. 20, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Jen-I Lai, Taoyuan, TW;

Chun-Heng Wu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); H01L 21/31116 (2013.01); H01L 28/90 (2013.01); H10B 12/03 (2023.02);
Abstract

A method for manufacturing a capacitor includes: providing a substrate and a multilayer structure; forming a recess in the multilayer structure; forming a first electrode layer on a surface of the recess; performing a selective etching treatment to remove the first and second stack material layers; performing a selective vapor phase etching treatment to the first electrode layer to form a smaller thickness of the first electrode layer; and forming a dielectric layer and a second electrode layer in which the dielectric layer is between the first and second electrode layer.


Find Patent Forward Citations

Lai, Jen-I. (2023). Method for manufacturing a capacitor (U.S. Patent No. 11688611). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11688611

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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