The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Nov. 02, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Vamsi Pavan Rayaprolu, San Jose, CA (US);

Giuseppina Puzzilli, Boise, ID (US);

Karl D. Schuh, Santa Cruz, CA (US);

Jeffrey S. McNeil, Jr., Nampa, ID (US);

Kishore K. Muchherla, Fremont, CA (US);

Ashutosh Malshe, Fremont, CA (US);

Niccolo' Righetti, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/34 (2006.01); G11C 16/32 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01);
Abstract

A first group of memory cells of a memory device can be subjected to a particular quantity of program/erase cycles (PECs) in response to a programming operation performed on a second group of memory cells of the memory device. Subsequent to subjecting the first group of memory cells to the particular quantity of PECs, a data retention capability of the first group of memory cells can be assessed.


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