The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Aug. 16, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Michele Piccardi, Cupertino, CA (US);
Xiaojiang Guo, San Jose, CA (US);
Shigekazu Yamada, Suginamiku, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/34 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3418 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/30 (2013.01); G11C 11/5621 (2013.01); G11C 11/5671 (2013.01);
Abstract
Devices and techniques are disclosed herein to provide a high-voltage bias signal in a standby state of the storage system without exceeding a limited maximum standby current allowance of the storage system. The high-voltage bias signal can enable a string driver circuit in the standby state to couple a global word line to a local word line, to provide a bias to, or sink a voltage from, a pillar of a string of memory cells of the storage system in the standby state, such as to reduce read disturbances in the storage system.