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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11688462 B1

PDFFull Text
Date of Patent:
Jun. 27, 2023

Filed:

Jun. 22, 2021

Three-dimensional flash memory with back gate

Applicants:

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Pedisem Co., Ltd., Seoul, KR;

Inventors:

Yun Heub Song, Seoul, KR;

Chang Eun Song, Seoul, KR;

Assignees:

IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul, KR;

PeDiSem Co., Ltd., Seoul, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Viet Q Nguyen

Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

Disclosed is a three-dimensional flash memory including a back gate, which includes word lines extended and formed in a horizontal direction on a substrate so as to be sequentially stacked, and strings penetrating the word lines and extended and formed in one direction on the substrate. Each of the strings includes a channel layer extended and formed in the one direction, and a charge storage layer extended and formed in the one direction to surround the channel layer, the channel layer and the charge storage layer constitute memory cells corresponding to the word lines, and the channel layer includes a back gate extended and formed in the one direction, with at least a portion of the back gate surrounded by the channel layer, and an insulating layer extended and formed in one direction between the back gate and the channel layer.

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