The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Mar. 01, 2021
Nxp B.v., Eindhoven, NL;
Mark Douglas Hall, Austin, TX (US);
Tushar Praful Merchant, Austin, TX (US);
Anirban Roy, Austin, TX (US);
NXP B.V., Eindhoven, NL;
Abstract
A nanosheet MEMS sensor device and method are described for integrating the fabrication of nanosheet transistors () and MEMS sensors () in a single nanosheet process flow by forming separate nanosheet transistor and MEMS sensor stacks (A-A,B-B) of alternating Si and SiGe layers which are selectively processed to form gate electrodes (A-C) which replace the silicon germanium layers in the nanosheet transistor stack, to form silicon fixed electrodes using silicon layers (B-B-) on a first side of the MEMS sensor stack, and to form silicon cantilever electrodes using silicon layers (B-B-) on a second side of the MEMS sensor stack by forming a narrow trench opening () in the MEMS sensor stack to expose and remove remnant silicon germanium layers on the second side in the MEMS sensor stack.