The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Aug. 24, 2018
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Masaru Yano, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H10B 43/27 (2023.01); H10B 41/00 (2023.01); H10B 43/30 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01); G11C 16/06 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0466 (2013.01); H10B 41/00 (2023.02); H10B 43/30 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02); G11C 11/5671 (2013.01); G11C 16/06 (2013.01); G11C 16/10 (2013.01);
Abstract

A NOR flash memory comprising a memory cell having a three-dimensional structure for saving power consumption is provided. The flash memory of the present invention includes a pillar part, a charge accumulating part, an insulating part, a control gate and a selecting gate. The pillar part extends in a vertical direction from a surface of a substrate and includes a conductive semiconductor material. The charge accumulating part is formed by surrounding the pillar part. The insulating part is formed by surrounding the pillar part. The control gate is formed by surrounding the charge accumulating part. The selecting gate is formed by surrounding the insulating part. One end of the pillar part is electrically connected to a bit line via a contact hole and another one end of the pillar part is electrically connected to a conductive region formed on the surface of the substrate.


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