The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Sep. 15, 2021
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Po-Han Wu, Pingtung County, TW;

Pai-Chun Tsai, Hsinchu, TW;

Tzu-Ming Ou Yang, Taichung, TW;

Shu-Ming Lee, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H10B 12/03 (2023.02); H01L 21/308 (2013.01); H10B 12/50 (2023.02);
Abstract

A method includes forming a stack of material layers to cover an array region and a periphery region of a substrate. A first patterned mask layer is formed, and the pattern of the first patterned mask layer is transferred to the stack of material layers, thereby forming a first array pattern and a first periphery pattern respectively in the array and periphery regions. A second patterned mask layer is provided above the first array and periphery patterns. The pattern of the second patterned mask is not aligned with the pattern of the first patterned mask. The pattern of the second patterned mask layer is transferred to form the first and second sacrificial patterns respectively in the array and periphery regions. The first array pattern, the first and second sacrificial patterns, and the first periphery pattern are simultaneously transferred to form a second array pattern and a second periphery pattern.


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