The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Jun. 15, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Che-Cheng Chang, New Taipei, TW;

Jui-Ping Chuang, Hsinchu, TW;

Chen-Hsiang Lu, Hsinchu, TW;

Yu-Cheng Liu, Zhubei, TW;

Wei-Ting Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 21/823878 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.


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