The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Dec. 07, 2020
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Assignee:
FLOSFIA Inc., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/772 (2006.01); H01L 29/808 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/04 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01); H01L 33/44 (2010.01); H01L 33/26 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02565 (2013.01); H01L 21/02573 (2013.01); H01L 21/02628 (2013.01); H01L 29/04 (2013.01); H01L 29/66969 (2013.01); H01L 29/739 (2013.01); H01L 29/7395 (2013.01); H01L 29/778 (2013.01); H01L 29/7722 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 29/8083 (2013.01); H01L 29/812 (2013.01); H01L 29/8122 (2013.01); H01L 29/872 (2013.01); H01L 29/8725 (2013.01); H01L 33/005 (2013.01); H01L 33/26 (2013.01); H01L 33/44 (2013.01);
Abstract
A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.