The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Apr. 28, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/161 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823821 (2013.01); H01L 29/0676 (2013.01); H01L 29/161 (2013.01); H01L 29/4966 (2013.01); H01L 29/518 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract
Stacked nanosheet complementary metal-oxide-semiconductor field effect transistor devices include a lower semiconductor channel sheet on a substrate. An upper semiconductor channel sheet is on the substrate above the lower semiconductor channel sheet. The upper semiconductor channel sheet is a different semiconductor material than the lower semiconductor channel sheet. A dielectric substitute partition sheet is on the substrate between the upper semiconductor channel sheet and the lower semiconductor channel sheet.