logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11682674 B1

PDFFull Text
Date of Patent:
Jun. 20, 2023

Filed:

Apr. 28, 2021

Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Zhenxing Bi, Dunn Loring, VA (US);

Kangguo Cheng, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Samuel Waldbaum

Primary Examiner:

Galina G Yushina

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/161 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823821 (2013.01); H01L 29/0676 (2013.01); H01L 29/161 (2013.01); H01L 29/4966 (2013.01); H01L 29/518 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract

Stacked nanosheet complementary metal-oxide-semiconductor field effect transistor devices include a lower semiconductor channel sheet on a substrate. An upper semiconductor channel sheet is on the substrate above the lower semiconductor channel sheet. The upper semiconductor channel sheet is a different semiconductor material than the lower semiconductor channel sheet. A dielectric substitute partition sheet is on the substrate between the upper semiconductor channel sheet and the lower semiconductor channel sheet.

Find Patent Forward Citations

Bi, Zhenxing. (2023). Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices (U.S. Patent No. 11682674). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11682674

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…