The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Nov. 24, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Mukta Ghate Farooq, Hopewell Junction, NY (US);
James J. Kelly, Schenectady, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 24/03 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0569 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05663 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05673 (2013.01); H01L 2224/05676 (2013.01); H01L 2224/05678 (2013.01); H01L 2224/05684 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01044 (2013.01); H01L 2924/01045 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01076 (2013.01); H01L 2924/01077 (2013.01); H01L 2924/01078 (2013.01);
Abstract
A method of fabricating an under-bump metallurgy (UBM) structure that is free of gold processing includes forming a titanium layer on top of a far back of line (FBEOL) of a semiconductor. A first copper layer is formed on top of the titanium layer. A photoresist (PR) layer is formed on top of the first copper layer between traces of the FBEOL to provide a cavity to the FBEOL traces. A top copper layer is formed on top of the first copper layer. A protective surface layer (PSL) is formed on top of the top copper layer.