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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11682587 B1

PDFFull Text
Date of Patent:
Jun. 20, 2023

Filed:

Mar. 08, 2021

Semiconductor device and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Mark Van Dal, Linden, BE;

Gerben Doornbos, Kessel-Lo, BE;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Moin M Rahman

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78618 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 21/0245 (2013.01); H01L 29/7831 (2013.01); H01L 2029/7858 (2013.01);
Abstract

In a method of manufacturing a semiconductor device, a fin structure having a bottom portion, an intermediate portion disposed over the bottom portion and an upper portion disposed over the intermediate portion is formed. The intermediate portion is removed at a source/drain region of the fin structure, thereby forming a space between the bottom portion and the upper portion. An insulating layer is formed in the space. A source/drain contact layer is formed over the upper portion. The source/drain contact layer is separated by the insulating layer from the bottom portion of the fin structure.

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