The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Aug. 29, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Lei Zhu, Hefei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01); G05F 1/10 (2006.01); G05F 1/56 (2006.01); H03K 17/56 (2006.01); H03K 5/00 (2006.01);
U.S. Cl.
CPC ...
G05F 1/56 (2013.01); H03K 17/56 (2013.01); H03K 2005/00013 (2013.01);
Abstract

A voltage generating circuit includes a first transistor and a second transistor. Voltage of a substrate of the first transistor varies with a first parameter. The first parameter is any one of a supply voltage, an operating temperature, as well as a manufacturing process of the voltage generating circuit. A gate of the first transistor is connected to a drain of the first transistor. The substrate of the first transistor serves as an output of the voltage generating circuit. A gate of the second transistor is connected to a drain of the second transistor.


Find Patent Forward Citations

Zhu, Lei. (2023). Voltage generating circuit, inverter, delay circuit, and logic gate circuit (U.S. Patent No. 11681313). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11681313

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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