The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Nov. 24, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Hsuan-Wen Wang, Kaohsiung, TW;
Hao-Ming Chang, Pingtung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/36 (2012.01); G03F 1/72 (2012.01); G03F 1/60 (2012.01); G03F 1/26 (2012.01); G03F 1/48 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G03F 1/26 (2013.01); G03F 1/48 (2013.01); G03F 1/60 (2013.01); G03F 1/72 (2013.01); G03F 1/80 (2013.01);
Abstract
A method for forming a photomask includes receiving a mask substrate including a protecting layer and a shielding layer formed thereon, removing portions of the shielding layer to form a patterned shielding layer, and providing a BSE detector to monitor the removing of the portions of the shielding layer. When a difference in BSE intensities obtained from the BSE detector is greater than approximately 30%, the removing of the portions of the shielding layer is stopped. The BSE intensity in following etching loops becomes stable.