The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Feb. 21, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nelson Felix, Slingerlands, NY (US);

Luciana Meli Thompson, Albany, NY (US);

Ashim Dutta, Menands, NY (US);

Ekmini A. De Silva, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 1/22 (2012.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); G03F 7/0757 (2013.01); H01L 21/3081 (2013.01);
Abstract

Techniques for EUV resist pattern transfer using a graded hardmask are provided. In one aspect, a method of patterning is provided. The method includes: forming a graded hardmask on a device stack; depositing a resist onto the graded hardmask; patterning the resist to form a pattern in the resist having at least one feature; modifying at least one surface region to increase an etch rate of the graded hardmask; transferring the pattern from the resist to the graded hardmask; and transferring the pattern from the graded hardmask to at least one underlying layer of the device stack. A device structure formed by the patterning method is also provided.


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