The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Mar. 25, 2022
Applicant:
Novellus Systems, Inc., Fremont, CA (US);
Inventor:
Bhadri N. Varadarajan, Beaverton, OR (US);
Assignee:
Novellus Systems, Inc., Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C23C 16/452 (2006.01); C23C 16/505 (2006.01); H01L 21/02 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/325 (2013.01); C23C 16/452 (2013.01); C23C 16/50 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02216 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01);
Abstract
Provided are methods and systems for providing silicon-containing films. The composition of the silicon-containing film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.