The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Dec. 16, 2020
Applicant:

Gan Systems Inc., Ottawa, CA;

Inventors:

Juncheng Lu, Kanata, CA;

Larry Spaziani, Chelmsford, MA (US);

Assignee:

GaN Systems Inc., Kanata, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H03K 17/567 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01); H03K 2217/0081 (2013.01);
Abstract

Hybrid power switching stages and driver circuits are disclosed. An example semiconductor power switching device comprises a high-side switch and a low-side switch connected in a half-bridge configuration, wherein the high-side switch comprises a GaN power transistor and the low-side switch comprises a Si MOSFET. The Si—GaN hybrid switching stage provides enhanced performance, e.g. reduced switching losses, in a cost-effective solution which takes advantage of characteristics of power switching devices comprising both GaN power transistors and Si MOSFETs. Also disclosed is a gate driver for the Si—GaN hybrid switching stage, and a semiconductor power switching stage comprising the gate driver and a Si—GaN hybrid power switching device having a half-bridge or full-bridge switching topology.


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