The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Aug. 06, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ming Hsien Tsai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/00 (2006.01); H03K 17/0812 (2006.01); H02M 1/08 (2006.01); H02M 1/32 (2007.01);
U.S. Cl.
CPC ...
H03K 17/08122 (2013.01); H02M 1/08 (2013.01); H02M 1/32 (2013.01);
Abstract

A circuit includes a power supply voltage node having a power supply voltage level, a protection circuit that generates a first signal having first and second logical voltage levels based on the power supply voltage level, and a gate driver. The gate driver includes a first n-type HEMT between the power supply voltage node and a first node, a second n-type HEMT between the first node and a power supply reference node, and a DCFL circuit between the first node and an output terminal. A gate of the first n-type HEMT receives the first signal, a gate of the second n-type HEMT receives a second signal, and the DCFL circuit generates a third signal at the output terminal based on the second signal when the first signal has the first logical voltage level, and as a DC voltage level when the first signal has the second logical voltage level.


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