The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Oct. 30, 2020
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Kenneth P. Brewer, Mesa, AZ (US);
Basim Noori, San Jose, CA (US);
Marvin Marbell, Morgan Hill, CA (US);
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/195 (2006.01); H03F 1/56 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 3/195 (2013.01); H03F 1/565 (2013.01); H03F 3/211 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract
RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.