The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Mar. 04, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Zhenxing Bi, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Peng Xu, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/41766 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/26513 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 2029/7858 (2013.01);
Abstract

Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes performing fabrication operations to form a field effect transistor (FET) device on a substrate. The fabrication operations include forming a channel region over the substrate, forming a bottom conductive layer of a wrap-around source or drain (S/D) contact over the substrate, and forming a S/D region over the bottom conductive layer and adjacent to the channel region. The S/D region is communicatively coupled to the channel region and the bottom conductive layer.


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