The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Oct. 16, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sanghyun Jo, Seoul, KR;
Eunha Lee, Seoul, KR;
Jinseong Heo, Seoul, KR;
Junghwa Kim, Yongin-si, KR;
Hyangsook Lee, Suwon-si, KR;
Seunggeol Nam, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 23/291 (2013.01); H01L 29/4236 (2013.01); H01L 29/66977 (2013.01);
Abstract
An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.