The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Apr. 27, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taesung Jeong, Osan-si, KR;

Doohwan Lee, Cheonan-si, KR;

Hongwon Kim, Suwon-si, KR;

Junggon Choi, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 25/105 (2013.01); H01L 2221/6835 (2013.01); H01L 2224/16227 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor package including a redistribution substrate with a first insulating layer, one or more second insulating layers on the first insulating layer, and a plurality of redistribution layers. The first insulating layer includes a first photosensitive resin having an elongation of 60% or more and toughness of 70 mJ/mmor more. The one or more second insulating layers include a second photosensitive resin having an elongation in a range of 10% to 40% and toughness of 40 mJ/mm.


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