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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11674217 B1

PDFFull Text
Date of Patent:
Jun. 13, 2023

Filed:

Mar. 23, 2017

Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell

Applicant:

Ulvac, Inc., Chigasaki, JP;

Inventors:

Junsuke Matsuzaki, Chigasaki, JP;

Hirohisa Takahashi, Chigasaki, JP;

Assignee:

ULVAC, INC., Chigasaki, JP;

Attorney:

Grossman, Tucker, Perreault & Pfleger, PLLC

Primary Examiner:

Michael A Band

Int. Cl.
CPC ...
C23C 14/56 (2006.01); C23C 14/18 (2006.01); C23C 14/50 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 31/18 (2006.01); C23C 14/34 (2006.01); H01L 31/0224 (2006.01); H01L 31/0376 (2006.01); H01L 31/075 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
C23C 14/56 (2013.01); C23C 14/185 (2013.01); C23C 14/50 (2013.01); H01J 37/32899 (2013.01); H01J 37/3488 (2013.01); H01L 21/67173 (2013.01); H01L 21/67742 (2013.01); H01L 31/1864 (2013.01); H01L 31/1884 (2013.01); C23C 14/34 (2013.01); H01L 31/022475 (2013.01); H01L 31/03762 (2013.01); H01L 31/075 (2013.01); H01L 31/202 (2013.01);
Abstract

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

Find Patent Forward Citations

Matsuzaki, Junsuke. (2023). Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell (U.S. Patent No. 11674217). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11674217

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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