The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jun. 02, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Jianheng Li, Santa Clara, CA (US);
Lai Zhao, Campbell, CA (US);
Yujia Zhai, Fremont, CA (US);
Soo Young Choi, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrodeis disposed over the gate dielectric layer. The gate dielectric layer has a Dof about 5ecmeVto about 5ecmeVand a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.