The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Nov. 15, 2018
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); C23C 16/448 (2006.01); H01L 21/02 (2006.01); H01L 21/443 (2006.01); H01L 21/465 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); C23C 16/4481 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/443 (2013.01); H01L 21/465 (2013.01); H01L 29/66969 (2013.01); H01L 29/7397 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H02M 3/33576 (2013.01);
Abstract
The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).