The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Aug. 26, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hua Tan, Shanghai, CN;

Jingxun Eric Wu, Singapore, SG;

Yingying Zhu, Shanghai, CN;

Hui Yang, Shanghai, CN;

Bo Zhou, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G06F 3/06 (2006.01); G11C 16/26 (2006.01); G11C 16/06 (2006.01); G11C 29/10 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/06 (2013.01); G11C 16/26 (2013.01); G11C 29/10 (2013.01); G11C 29/50 (2013.01);
Abstract

A memory device provides a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.


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