The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Mar. 04, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Juntao Li, Cohoes, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Dexin Kong, Slingerlands, NY (US);

Zheng Xu, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H10N 70/8413 (2023.02); G11C 13/0004 (2013.01); H10B 63/30 (2023.02); H10N 70/023 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/231 (2023.02); H10N 70/881 (2023.02); G11C 2013/008 (2013.01);
Abstract

An approach to form a semiconductor structure with a multiple layer phase change material stack and four electrodes that functions as an integrated switch device. The semiconductor structure includes a sidewall spacer that is on two opposing sides of the multiple layer phase change material stack contacting an edge of each layer of the multiple layer phase change material stack. The semiconductor structure includes a pair of a first type of electrode, where each of the pair of the first type of electrode abuts each of the sidewall spacers on the two opposing sides of the multiple layer phase change material stack. A pair of a second type of electrode, where each of the second type of electrode abuts each of two other opposing sides of the multiple layer phase change material stack and contacts a heater material on outside portions of the multiple layer phase change material stack.


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