The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jul. 15, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Jia-Rong Wu, Kaohsiung, TW;

Rai-Min Huang, Taipei, TW;

I-Fan Chang, Tainan, TW;

Ya-Huei Tsai, Tainan, TW;

Yu-Ping Wang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02);
Abstract

A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first patterned mask on the first IMD layer, in which the first patterned mask includes a first slot extending along a first direction; forming a second patterned mask on the first patterned mask, in which the second patterned mask includes a second slot extending along a second direction and the first slot intersects the second slot to form a third slot; and forming a first metal interconnection in the third slot.


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