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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11665897 B1

PDFFull Text
Date of Patent:
May. 30, 2023

Filed:

Mar. 14, 2022

Improving surface topography by forming spacer-like components

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chun-Chang Wu, Nantou County, TW;

Chihy-Yuan Cheng, Tainan, TW;

Sz-Fan Chen, Hsinchu, TW;

Shun-Shing Yang, Tainan, TW;

Wei-Lin Chang, Hsinchu, TW;

Ching-Sen Kuo, Taipei, TW;

Feng-Jia Shiu, Hsinchu County, TW;

Chun-Chang Chen, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Errol V Fernandes

Int. Cl.
CPC ...
H01L 27/11546 (2017.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/027 (2006.01); H01L 27/11521 (2017.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 23/544 (2006.01); H01L 27/11524 (2017.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11546 (2013.01); H01L 21/0276 (2013.01); H01L 21/31058 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 23/544 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 29/42324 (2013.01); H01L 29/6656 (2013.01); H01L 29/66825 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.

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