The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jul. 14, 2022
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Kai Jen, Taichung, TW;

Hao-Chuan Chang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H10B 12/02 (2023.02); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H10B 12/01 (2023.02); H10B 12/0335 (2023.02); H10B 12/05 (2023.02); H10B 12/09 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

A method of manufacturing a DRAM includes proving a substrate having active regions. First bit line structures are buried in the substrate. Each of first bit line structures extends along a first direction. Every two of the first bit line structures are disposed between two neighboring ones of the active regions arranged along a second direction. A plurality of pillar structures are formed arranged along the first direction by dividing each of the active regions. Second bit line structures are formed. Each of the second bit line structures is located between the pillar structures of a corresponding one of the active regions and extends through the corresponding one of the active regions along the second direction to be disposed on the first bit line structures at two sides of the corresponding one of the active regions and be electrically connected to the first bit line structures below.


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