The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Apr. 10, 2019
Atomera Incorporated, Los Gatos, CA (US);
Robert John Stephenson, Duxford, GB;
ATOMERA INCORPORATED, Los Gatos, CA (US);
Abstract
A method for making a semiconductor device may include forming an inverted T channel on a substrate, with the inverted T channel comprising a superlattice. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming source and drain regions on opposing ends of the inverted T channel, and forming a gate overlying the inverted T channel between the source and drain.