The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Oct. 27, 2016
Applicant:
Nexperia B.v., Nijmegen, NL;
Inventors:
Jeroen Croon, Waalre, NL;
Coenraad Cornelis Tak, San Jose, CA (US);
Assignee:
Nexperia B.V., Nijmegen, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 23/552 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 29/78 (2006.01); H01L 25/065 (2023.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 23/495 (2013.01); H01L 23/552 (2013.01); H01L 23/49562 (2013.01); H01L 23/49805 (2013.01); H01L 25/0655 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48237 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01);
Abstract
A semiconductor device and a method of making the same. The device includes a substrate mounted on a carrier, the substrate comprising a High Electron Mobility Transistor (HEMT) having a source, a gate and a drain. The carrier comprises an electrically conductive shielding portion for providing shielding against electromagnetic interference associated with switching of the device during operation. The electrically conductive shielding portion is electrically isolated from the source and from the backside of the substrate.