The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jun. 14, 2021
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Chen Zhang, Guilderland, NY (US);
Xin Miao, San Jose, CA (US);
Wenyu Xu, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device including a plurality of nanosheet transistor channels adjacent to a source/drain. An inner spacer located between each of the plurality of nanosheet transistor channels and the inner spacer wraps around the end of each of the plurality of nanosheet transistors. The source/drain is in contact with the inner spacer and each of the plurality of nanosheet transistor channels. A gate surrounding each of the plurality of nanosheet transistor channels and an electrical contact connected to the source/drain. An ultra low-k spacer located between the gate and the source/drain. The ultra low-k spacer reduces the parasitic capacitance of the nanosheet transistor.