The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

May. 25, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsueh-Chih Chou, Tainan, TW;

Chia Hao Tu, Tainan, TW;

Sang Hoo Dhong, Hsin-Chu, TW;

Lee-Chung Lu, Taipei, TW;

Li-Chun Tien, Tainan, TW;

Ting-Wei Chiang, New Taipei, TW;

Hui-Zhong Zhuang, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); H01L 27/0207 (2013.01); H01L 2027/11812 (2013.01); H01L 2027/11814 (2013.01); H01L 2027/11816 (2013.01); H01L 2027/11822 (2013.01); H01L 2027/11848 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11872 (2013.01); H01L 2027/11874 (2013.01); H01L 2027/11875 (2013.01);
Abstract

A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.


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