The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jan. 30, 2019
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventor:
Zhi-Biao Zhou, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/762 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 21/76251 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1203 (2013.01);
Abstract
A semiconductor device is provided, including a buried oxide layer, having a first side and a second side. A silicon-based device layer is disposed on the first side of the buried oxide layer. The silicon-based device layer includes a first interconnection structure. A semiconductor-based device layer is disposed on the second side of the buried oxide layer. The semiconductor-based device layer includes a second interconnection structure.
Zhou, Zhi-Biao. (2023). Semiconductor device integrating silicon-based device with semiconductor-based device and method for fabricating the same (U.S. Patent No. 11664372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11664372
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile