The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jan. 13, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ju-Il Choi, Seongnam-si, KR;

Gyuho Kang, Cheonan-si, KR;

Seong-Hoon Bae, Cheonan-si, KR;

Dongjoon Oh, Suwon-si, KR;

Chungsun Lee, Asan-si, KR;

Hyunsu Hwang, Siheung-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16227 (2013.01);
Abstract

A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.


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